
Huayi Microelectronics Co., Ltd.
A likely pin-compatible P-Channel MOSFET with improved RDS(on) but a lower gate threshold that requires review.
HY19P03D is a -30V, -90A P-Channel MOSFET in a TO-252 package. Finding a replacement involves matching these key ratings and verifying gate drive compatibility, especially the gate threshold voltage.
Lower Vgs(th) may alter switching behavior or noise immunity.
Identical package and same manufacturer suggest low physical risk.
Direct replacement for HY19P03D should use only Datasheet verified or Strong match candidates; many approved options still require engineering review.
Evaluate HYG045P03LQ1D, focusing on gate drive compatibility due to its lower Vgs(th).
Gate threshold voltage mismatch.

Huayi Microelectronics Co., Ltd.
A likely pin-compatible P-Channel MOSFET with improved RDS(on) but a lower gate threshold that requires review.
| Feature / factor | HY19P03D | HYG045P03LQ1D | Alt 2 | Alt 3 | Compatibility / risk |
|---|---|---|---|---|---|
| Package | TO-252-2L | TO-252-2L | TO-252-2L — Package matches, likely pin-compatible. | ||
| Fet Type | P-Channel | P-Channel | P-Channel — Both are P-Channel MOSFETs. | ||
| Voltage | -30 V | -30 V | -30 V — Drain-Source Voltage (Vdss) matches. | ||
| Current | -90 A | -90 A | -90 A — Continuous Drain Current (Id) matches. | ||
| Rds(On) | 6 mΩ | 5.5 mΩ | 5.5 mΩ — Candidate has lower on-resistance, improving efficiency. | ||
| Vgs(Th) | -3.0 V (max) | -1.2V (typ) | -1.2V (typ) — Lower threshold may affect gate drive compatibility and noise immunity. | ||
| Temperature | -55°C to 150°C | -55°C to 175°C | -55°C to 175°C — Candidate has a wider operating temperature range. |
Verified drop-in options for HY19P03D are limited in the current batch. Review candidates marked Strong match or Datasheet verified, and validate package, pinout, and electrical limits before committing a BOM change.