T2N7002BK,LM
Toshiba Semiconductor and Storage
Needs validationmedium risk
Potential upgrade with higher current and lower on-resistance in the same package.
Best Alternatives to NX7002BKR
NX7002BKR is a popular 60V N-channel Trench MOSFET in a SOT23 package. Several functional alternatives and potential pin-compatible upgrades with similar or improved electrical characteristics are available.
AI replacement insight
Electrical risklow
Most candidates have similar or better voltage/current ratings. RDS(on) varies.
Package risklow
All reviewed candidates use the common SOT-23 package, but pinout must be confirmed.
Sourcing risklow
This is a common MOSFET type with alternatives from multiple manufacturers.
Can it be replaced directly?
Direct replacement for NX7002BKR should use only Datasheet verified or Strong match candidates; many approved options still require engineering review.
Best replacement path
Upgrade to T2N7002BK,LM for improved current handling and lower power loss.
Main risk
The primary risk is assuming pin-compatibility without datasheet verification. Secondary risks involve parametric differences like higher RDS(on) or lower current ratings in some alternatives.
Recommended alternatives
5Alternative comparison matrix
| Feature / factor | NX7002BKR | T2N7002BK,LM | T2N7002AK-ES | L2N7002SLT1G | Compatibility / risk |
|---|---|---|---|---|---|
| Package | SOT23 (TO-236AB) | SOT-23 | SOT-23 | SOT-23 | SOT-23 — Form factor matches.; T2N7002AK-ES: Form factor matches.; L2N7002SLT1G: Form factor matches.; S-L2N7002SLT1G: Form factor matches. |
| Voltage | 1.1V to 2.1V | 1.1V to 2.1V | 60V | 60V | 1.1V to 2.1V / 60V — Gate threshold voltage (VGSth) range matches.; T2N7002AK-ES: Drain-Source Voltage (VDS) matches.; L2N7002SLT1G: VDS matches.; S-L2N7002SLT1G: VDS matches. |
| Current | 270mA | 400mA | 300mA | 320mA | 400mA / 300mA / 320mA / 380mA — Higher continuous drain current provides more margin.; T2N7002AK-ES: Slightly higher continuous drain current.; L2N7002SLT1G: Higher drain current.; S-L2N7002SLT1G: Higher drain current. |
| Resistance | 2.2Ω (Typ) | 1.05Ω (Typ) | 1.85Ω | 2.8Ω | 1.05Ω (Typ) / 1.85Ω / 2.8Ω — Lower RDS(on) improves efficiency.; T2N7002AK-ES: Lower RDS(on) improves efficiency.; L2N7002SLT1G: Higher RDS(on) will increase conduction losses.; S-L2N7002SLT1G: Higher RDS(on) will increase conduction losses. |
Application & sourcing insights
Questions & answers
Verified drop-in options for NX7002BKR are limited in the current batch. Review candidates marked Strong match or Datasheet verified, and validate package, pinout, and electrical limits before committing a BOM change.