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Best Alternatives to BSS84LT1G

Package: TO-236-3, SC-59, SOT-23-3onsemiMOSFETs - SinglePackage: Tape & Reel (TR); Cut Tape (CT); Digi-Reel®Technology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 50 VCurrent - Continuous Drain (Id) @ 25°C: 130mA (Ta)Drive Voltage (Max Rds On, Min Rds On): 5V

BSS84LT1G is a P-channel SOT-23 MOSFET. The listed alternates need FAE review, mainly for Vdss and pinout.

AI replacement insight

Electrical riskhigh

Vdss is lower than -50 V.

Package risklow

Kept parts are SOT-23-3.

Firmware risklow

Discrete MOSFET.

Sourcing riskmedium

Lifecycle varies by part.

Can it be replaced directly?

No verified pin-compatible replacement is proven from these candidates.

Best replacement path

Start with SI2319CDS-T1-GE3 only if -40 V is enough.

Main risk

Lower drain-source voltage on kept candidates.

Recommended alternatives

3
SI2319CDS-T1-GE3 package
SI2319CDS-T1-GE3

Vishay Siliconix

Needs validationmedium risk

P-channel SOT-23 MOSFET with higher current but lower voltage rating.

View details

Alternative comparison matrix

Feature / factorBSS84LT1GSI2319CDS-T1-GE3Si2323DDS-T1-GE3DMG2301L-13Compatibility / risk
PackageSOT-23-3SOT-23-3SOT-23-3SOT-23-3SOT-23-3 — same case; Si2323DDS-T1-GE3: same case; DMG2301L-13: same case
Pinoutunknownunknownunknownunknownunknown — not proven; Si2323DDS-T1-GE3: not proven; DMG2301L-13: not proven
Voltage-50 V-40 V-20 V-20 V-40 V / -20 V — needs derating; Si2323DDS-T1-GE3: large derating; DMG2301L-13: large derating
Current130 mA-4.4 A-5.3 A-3 A-4.4 A / -5.3 A / -3 A — higher Id; Si2323DDS-T1-GE3: higher Id; DMG2301L-13: higher Id
Temperature-55 to 150 C-55 to 150 C---55 to 150 C — same range
Resistance10 ohm-0.039 ohm-0.039 ohm — lower Rds
LifecycleActive--ActiveActive — active

Application & sourcing insights

Questions & answers

SI2319CDS-T1-GE3 is the closest kept option, but its -40 V rating needs review.